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NTB52N10
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V GS = 0 Vdc, V DS = 100 Vdc, T J = 25 ° C)
(V GS = 0 Vdc, V DS = 100 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
100
?
?
?
?
?
160
?
?
?
?
?
5.0
50
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V DS = V GS, I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? State Resistance
(V GS = 10 Vdc, I D = 26 Adc)
(V GS = 10 Vdc, I D = 26 Adc, T J = 125 ° C)
Drain ? to ? Source On ? Voltage
(V GS = 10 Vdc, I D = 52 Adc)
Forward Transconductance (V DS = 26 Vdc, I D = 10 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
?
2.92
? 8.75
0.023
0.050
1.25
31
4.0
?
0.030
0.060
1.45
?
Vdc
mV/ ° C
W
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
2250
620
135
3150
860
265
pF
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn ? On Delay Time
t d(on)
?
15
25
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 80 Vdc, I D = 52 Adc,
V GS = 10 Vdc,
R G = 9.1 W )
t r
t d(off)
t f
?
?
?
95
74
100
180
150
190
Total Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
(V DS = 80 Vdc, I D = 52 Adc,
V GS = 10 Vdc)
Q tot
Q gs
Q gd
?
?
?
72
13
37
135
?
?
nC
BODY ? DRAIN DIODE RATINGS (Note 3)
Diode Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 52 Adc, V GS = 0 Vdc)
(I S = 37 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 52 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.06
0.95
148
106
42
0.66
1.5
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width = 300 m s max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
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